High Performance, High Reliability, Custom Dual InGaAs Photodiodes for 2 to 18 GHz Electronic Warfare (EW) Applications (2006)

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A. M. Joshi, D. R. Mohr, D. A. Becker, A. Rumyantsev, and S. Lempke
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA

ABSTRACT

We have manufactured custom, dual InGaAs photodiodes using our proprietary Dual-Depletion Region (DDR) technology. The devices demonstrate high reliability and superior RF performance, thus making them ideal for deployment in the field by services like the US Navy...

* Paper presented at GOMACTech Conference, San Diego, California, USA, 2006, paper 25.3 , pp 339-342.