Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

Site Search

Follow Discovery Semiconductors on TwitterFollow Discovery Semiconductors on Twitter

High-Speed Low-Noise p-i-n InGaAs Photoreceiver at 2-um Wavelength (2008)

Abhay Joshi and Don Becker
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, New Jersey, 08628, USA


A p-i-n InGaAs photoreceiver with a 3-dB bandwidth of 6 GHz at 2-um wavelength is presented. The photodiode, having a responsivity of 1.34 A/W and a dark current of 400 nA, is coupled to a transimpedance amplifier to provide a conversion gain of 670 V/W at room temperature.

*IEEE Photonics Technology Letters, Vol. 20, No. 8, April 15, 2008.

previous next button Previous Back Next

Discovery Semiconductors footer line blue Home | Quality | Papers | News | About Us | Contact Us | Disclaimer | Privacy Policy | Help Viewing Our Site | Site Index
Discovery Semiconductors, Inc.® - 119 Silvia Street, Ewing, NJ 08628 USA
Tel: +1 (609) 434-1311 - Fax: +1 (609) 434-1317 Copyright ©1997-2017  All Rights Reserved