Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

Site Search

Follow Discovery Semiconductors on TwitterFollow Discovery Semiconductors on Twitter

High Phase Linearity, High Power Handling, InGaAs Photodiodes for Precise Timing Applications (2009)


Shubhashish Datta, Abhay Joshi, Don Becker, and Roy Howard
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317

ABSTRACT

We report an InGaAs p-i-n photodiode with a power-to-phase conversion factor of 5.6rad/W at 2V peak RF amplitude at 1GHz frequency. In comparison, a PIN-TIA photoreceiver demonstrates 44rad/W phase linearity at 0.44V peak RF amplitude.

*OSA/OFC/NFOEC 2009.

previous next button Previous Back Next

Discovery Semiconductors footer line blue Home | Quality | Papers | News | About Us | Contact Us | Disclaimer | Privacy Policy | Help Viewing Our Site | Site Index
Discovery Semiconductors, Inc.® - 119 Silvia Street, Ewing, NJ 08628 USA
Tel: +1 (609) 434-1311 - Fax: +1 (609) 434-1317 Copyright ©1997-2017  All Rights Reserved