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Dual InGaAs Photodiodes Having High Phase Linearity for Precise Timing Applications (2009)

Abhay Joshi and Shubhashish Datta
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317


We report highly linear InGaAs p-i-n dual photodiodes having a power-to-phase conversion factor of <3.2 rad/W up to 1.5-V peak radio-frequency amplitude. These matched photodiodes, each having a 3-dB bandwidth of 22 GHz, demonstrate nearly identical performance leading to a differential power-to-phase conversion factor of <1.5 rad/W.

* IEEE Photonics Technology Letters, Vol. 21, No. 19, Page(s): 1360-1362, October 1, 2009.

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