Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

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2.2 Micron, Uncooled, InGaAs Photodiodes and Balanced Photoreceivers up to 25 GHz Bandwidth (2013)

Abhay Joshi, Shubhashish Datta, and Mike Lange
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317


We report lattice-mismatched, uncooled, 2.2 µm wavelength cutoff, InGaAs photodiodes and balanced photoreceivers with bandwidth up to 25 GHz. The responsivity at 2.05 µm is 1.2 A/W, and the 1 dB compression, optical current handling of these photodiodes is 10 mA at 7 V reverse bias. Such high current handling capacity allows these photodiodes to operate with a higher DC local oscillator (LO) power, thus, allowing more coherent gain and shot noise limited operation. The impulse response of these devices show rise time / fall time of ~15 ps, and full width half maximum of ~20 ps.

*Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87042G

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