Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317
As the current handling - bandwidth product of a single photodiode comprised of lattice matched In0.53Ga0.47As / InP material reaches a practical limit, we explore new lattice mismatched material system of In0.72Ga0.28As / InAsP / InP as a path-forward technology to increase this key parameter.