Discovery Semiconductors manufactures photodetectors and balanced photoreceivers for 10 Gb, 40Gb, and 100 Gb applications.

Site Search

Follow Discovery Semiconductors on TwitterFollow Discovery Semiconductors on Twitter

High-Power Highly Linear Photodiodes for High Dynamic Range LADARs


Shubhashish Datta and Abhay Joshi
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317

ABSTRACT

High power, highly linear photodiodes enhance the overall dynamic range of LADAR systems in two ways: faithfully transferring optical return signal into RF domain with high coherent gain and minimal non-linear distortions, and generating low-phase photonic microwave clocks. Large power handling capability of the photodiodes also reduces the requirement of signal amplification by RF amplifiers, which further improves the dynamic range. We present a 10 GHz bandwidth InGaAs p-i-n photodiode that generates broadband linear RF signal with peak-to-peak output amplitude up to 4 V and power-to-phase conversion factor < 4 rad/W. The photodiode's performance is reported with pulsed stimulus, for repetition rates varying from 1 GHz to 10 GHz, as well as continuous wave signals. At higher power levels, these photodiodes produce compressed signals up to 6 V peak-to-peak output. In the compressed regime the power-to-phase conversion factor approaches zero for selected operating conditions, which is useful for generating precision clocks.

* CLRC 2016, June 26 – July 1

Previous, Next and Return To Papers and Patents Previous Back Next

Discovery Semiconductors footer line blue Home | Quality | Papers | News | About Us | Contact Us | Disclaimer | Privacy Policy | Help Viewing Our Site | Site Index
Discovery Semiconductors, Inc.® - 119 Silvia Street, Ewing, NJ 08628 USA
Tel: +1 (609) 434-1311 - Fax: +1 (609) 434-1317 Copyright ©1997-2017  All Rights Reserved